Bonding characterization and nano-indentation study of the amorphous SiC xN y films with and without hydrogen incorporation

Abstract

The hardness and effective modulus of hydrogen-containing and hydrogen-free amorphous SiC x N y films were studied by nano-indentation. Amorphous SiC x N y films with and without hydrogen were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using a SiH 4–CH 3NH 2–N 2–H 2 gas mixture and hydrogen-free ion-beam sputtering deposition (IBSD), respectively. Fourier-transform infrared spectroscopy (FTIR) studies were used to investigate the bonding states of the SiC x N y materials. SiH, CH and NH bonds were detected by FTIR in ECR-CVD, but not in IBSD, films. The incorporation of hydrogen led to a reduction in both the hardness and modulus of the amorphous SiC x N y films. From nano-indentation measurements, the hardness and effective modulus of the IBSD coated, hydrogen-free amorphous SiC x N y films were 27–30 and 211–258 GPa, respectively. The corresponding values for the ECR-CVD coated, hydrogen-containing amorphous SiC x N y were 22–26 and 115–144 GPa, respectively.