Abstract

In this work, the influence of annealing time and number of annealing steps on the shear strength of plasma activated low temperature oxide-oxide fusion bonding wafer stacks is investigated. Shear strength measurements of previously manufactured shear strength measurement test structures are introduced to analyze the shear strength and related bond strength, respectively. An improved two-step annealing/cooling thermocycle is demonstrated which leads to a tremendous increase of the shear strength compared to a conventional single annealing step. Based on an optimized annealing through thermocycling, plasma activated low temperature oxide-oxide fusion bonding with reduced process time, lower temperature and higher bond strength becomes feasible.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.