Abstract
In this paper, the impact of body bias on hot carrier degradation (HCD) in advanced FinFET devices is experimentally investigated. It is observed that the degradation of I dsat is increasing with body bias for the short-channel core devices, while an opposite tendency is found in the long-channel IO devices. The different dependences are found due to the mechanisms of the single-carrier event (SCE) in short-channel devices but the multi-carrier event (MVE) in long-channel devices. The results are helpful for the physical understanding of HCD in FinFET devices.
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