Abstract
We describe studies of implantation-enhanced quantum-well intermixing in a lattice-matched InGaAs/InGaAsP multiple quantum well p-i-n heterostructure. Samples were implanted with a dose of 5×1014 P+ ions /cm2 at high energy of 1 MeV. The band gap for the samples was determined from photoluminescence at room temperature. The maximum blue-shift of the band gap was 107 nm after the RTA process at 675 °C for 9 minutes. However, it was improved to 140 nm after two-step anneals. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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