Abstract
Exciton-related mechanisms of optical gain formation in wide-band-gap semiconductors are reviewed. In particular, typical two models are focused. One is based on the concept of exciton localization, and the other is based on the radiative decay process of biexcitons. In addition, biexciton formation and its contribution to the formation of optical gain in ZnS-based quantum-well structures are discussed on the basis of our recent experimental results.
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