Abstract
Amorphous silicon oxygen nitride (aSiOxNy) films are prepared by microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) method using 10% SiH4 in N2/O2 mixtures. The Fourier transform infrared absorption spectroscopy shows that the main bonding configuration of the films is SiO and SiN. If O2 is input, the dominant composition of the films is SiOx, while it is SiNx at zero O2 flow rate. A blue photoluminescence (PL) band at 460nm produced by 565eV laser excitation is observed at room temperature from these films, and the emission intensity increases with decreasing O2 flow rate. The blue PL for aSiOxNy films, mainly composed of aSiOx, comes from oxygen deficient defects in the SiOx matrix. For aSiOxNy films, mainly composed of aSiNx, its blue PL is due to the electronhole radiative recombination from the defect states in the SiNx matrix.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have