Abstract
We report on the enhancement of photoluminescence (PL) from anatase TiO2 thin films covered by InN nanoparticles prepared using plasma enhanced chemical vapor deposition (PECVD). The SEM images and X-ray diffraction spectra illustrate the strong interaction between the InN particles and the TiO2 films. UV-Vis absorption spectra indicate that the InN particles have an increased absorption in the visible light region and may sensitize the TiO2 films. The strong PL band observed in the anatase TiO2 thin films with the addition of InN may have been due to an increased localization of impurities and/or defect-trapped excitons.
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