Abstract
A well-defined exciton absorption peak from a localized state was observed for the first time. The localized state was formed by fluctuation of well-barrier interfaces in a ZnSe/ZnSSe superlattice structure. Stimulated emission was observed from the localized state up to 100 K, and the physical origin is discussed from the temperature dependence of the stimulated emission peak. This opens the possibility to form a natural quantum box structure by controlling the well-barrier fluctuation.
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