Abstract
We report on the growth of GaN-based light emission diodes on Si(001) substrates. The optically active region of the samples consists of a fivefold InGaN/GaN multiple quantum well grown on a 2.5 µm thick AlGaN/GaN buffer layer structure. By growing on 4° off-oriented substrates and inserting four thin low-temperature AlN interlayers, a flat, smooth, and crack-free surface was obtained. The presented samples show an electrically stimulated emission of bright blue light at 455 and 490 nm, respectively. The crystallographic properties were analyzed by X-ray diffraction measurements and transmission electron microscopy, and the optical properties by photo-, electro-, and spatially resolved cathodoluminescence. The local peak-wavelength distribution amounts to 14.8 meV. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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