Abstract
An n-ZnSe/p-ZnSe/p+-GaAs blue light emitting diode was prepared by low pressure organometallic chemical vapor deposition. Its electroluminescence wavelength was 461 nm with a full width at half maximum 52 meV at 300 K. It shows that a pure blue ZnSe light emitting diode can be prepared under Zn-rich growth condition for n-type ZnSe epilayer doped with aluminum and under Se-rich growth condition for p-type ZnSe epilayer doped with nitrogen.
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