Abstract
Abstract We have demonstrated blue-light emission from ZnSTe-based electroluminescence (EL) devices. Photoelectroluminescence technique is used to study field-quenching effects on Te isoelectronic centers in undoped ZnSTe alloy. Heavy doping by Al in ZnSTe alloy is found to help reduce field quenching action and gives rise to much higher EL emission in ZnSTe:Al-based Schottky-barriery type structures. I – V characteristics and emission spectra reveal that a tunneling dominated mechanism is responsible for generating the carriers for impact excitation of the localized states associated with Te isoelectronic centers in these structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
