Abstract
ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias.
Highlights
Nowadays, white light-emitting diodes (WLEDs) have attracted significant interest for solid-state illumination due to their low power consumption, long operating time, and environmental benefits [1,2,3]
We report the fabrication of ZnO/InGaN/ GaN heterostructured LEDs
A UV emission and an emission peak centered at 560 nm were observed under reverse bias
Summary
White light-emitting diodes (WLEDs) have attracted significant interest for solid-state illumination due to their low power consumption, long operating time, and environmental benefits [1,2,3]. InGaN with a continuously variable bandgap from 0.7 to 3.4 eV has attracted considerable interest, and InGaN/GaN WLEDs are regarded as the most promising solid-state lighting device which can work in the whole visible and part of the near UV spectral regions [6]. As an alternative approach, heterostructured LEDs have been fabricated on top of a variety of p-type substrates, such as SrCu2O2 [11], Si [12], and GaN [13]. With the advantages of InGaN and ZnO, it is significant to fabricate ZnO/ InGaN/GaN heterojunctions with blue, green, and red emissions to obtain white light
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