Blue inorganic light emitting diode on flexible polyimide substrate using laser lift-off process.

Abstract

The fabrication process for the blue GaN inorganic light emitting diode (ILED) on flexible polyimide (PI) substrate by laser lift off (LLO) method was demonstrated. The GaN epi-structure was grown on patterned sapphire wafer. GaN samples were temporary bonded with polyimide substrate by flexible silver epoxy. Separation of the whole GaN LED film from GaN/sapphire wafer was accomplished using a single KrF excimer (248 nm) laser pulse directed through the transparent sapphire wafer. Device fabrication was carried out on both rigid silicon and flexible polyimide substrate, and I-V performance for both devices was measured. The optimized LLO process for the whole GaN LED film transfer would be applicable in flexible LED applications without compromising electrical properties.