Abstract
Blue InGaN/GaN multiple-quantum-well light-emitting diodes were grown on sapphire substrates by using a metal-organic vapor phase epitaxy system. A Mg-doped AlGaN electron-blocking barrier was introduced under various Cp2Mg ow conditions at a high temperature of 1050 C. The characterization included current-voltage, capacitance-voltage and electroluminescence analyses. The luminescence e ciency showed an improvement of more than 90 % when the Cp2Mg ow rate was increased from 50 to 200 sccm. The forward voltage was reduced to 3.18 V at 20 mA. The series resistance was also estimated to be 10.81 . Secondary-ion mass spectrometry revealed the Mg doping pro les close to the quantum-well active region. The increased Mg concentration resulted in improved hole injection and carrier concentration. This is in agreement with the increased electroluminescence e ciency and luminous intensity and with the lower turn-on voltage. The Xray di raction study showed a full width at half maximum of 290.1 arcsec from the GaN (0002) di raction and 325.9 arcsec from the GaN (10 12) di raction.
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