Abstract
Electroluminescent properties of thin silicon-rich oxide (SRO) films deposited by low pressure chemical vapor deposition (LPCVD) were studied. The gas flow ratio Ro = N<sub>2</sub>O/SiH<sub>4</sub> was changed to obtain different silicon concentrations within the SRO films. After deposition, SRO films were thermally annealed at 1100ºC for 3h in N<sub>2</sub> atmosphere in order to create silicon nanoparticles (Si-nps). Simple capacitive structures like Polysilicon/SRO/n-Si were used for the study. These light emitting capacitors (LECs) show intense blue (~466) and red EL (~685) at room temperature depending on the silicon excess within the SRO films. Electroluminescence in these LECs is obtained at direct current (DC) at both forward and reverse bias conditions. Nevertheless, a stronger whole area EL is obtained when devices are forwardly biased.
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