Abstract
In(Ga)N/GaN multiple quantum well structures with high indium composition were grown using pure InN in well layers by low-pressure metalorganic chemical vapor deposition. Blue emission using a thin In(Ga)N well width grown with only trimethylindium as a III-source showed strong carrier localization originating from a large fluctuation in indium composition and a reduced quantum-confined Stark effect due to the use of a thin well, both of which enhanced quantum efficiency. In contrast, an increase in InN growth time to achieve green emission exhibited a large blueshift of electroluminescent emission under forward-bias current and microstructural defect formation, which were responsible for the observed degradation in emission properties.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
