Abstract
A new mask layer of In2Ge8Sb85Te5 was developed and used on super-resolution near-field phase change optical disks (super-RENS). The thermal and optical properties of the mask layer were investigated. Thermal analysis showed higher crystallization temperature and activation energy but lower melting temperature than Ge2Sb2Te5 phase change material. Ultra-fast crystallization within 30 ns was obtainable using a pulsed high-power laser beam of 405 nm wavelength. The recording performance of the new structure was evaluated on an optical recording system with a numerical aperture of 0.85 and a 405 nm blue-violet laser diode. Carrier-to-noise ratio (CNR) of 32, 25, 15, and 10 dB were obtained for 80, 50, 40, and 30 nm mark trains, respectively. Readout thermal stability of 20,000 cycles was realized for 80 nm mark trains. These performances were by far the highest obtainable for blu-ray aperture-type super-RENS disk.
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