Abstract
In this work we have studied the electrochemical behaviour of the BiO+/n-GaAs interface using an acidic solution. We present several experimental evidences of a surface blockade that inhibits the reduction of BiO+ ions on the substrate surface. This leads to poor quality Bi thin films with a high porosity. After the analysis of our experimental results, we propose that the blocking effect is produced by a layer of adsorbed hydrogen that passivates the substrate surface. Due to the covalent nature of the As-H bond, the adsorbed hydrogen remains at the surface until the applied potential is high enough to promote the hydrogen evolution.
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