Abstract
This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the optimal values of PCSS parameters. In this article, the parameters of the selected semiconductor materials used for making PCSSs, the device operation principle, and possible areas of use are presented. The paper demonstrates the construction of test PCSSs based on SI GaP and SI GaN and results of blocking characteristics measurements without the illumination, as well as with illumination with a small photon flux. Further research directions are presented also.
Highlights
In currently developed pulse power systems, both for civil applications and military usage photoconductive semiconductor switches (PCSSs) are increasingly used
Research conducted in recent years has proved experimentally that the performance of PCSSs made of SI 6H-SiC, SI 4H-SiC and SI gallium nitride (GaN) is much better compared to that made of SI GaAs [6]
In this paper we demonstrate the blocking characteristics of PCSSs made of the Si GaN and Si gallium phosphide (GaP)
Summary
In currently developed pulse power systems, both for civil applications and military usage photoconductive semiconductor switches (PCSSs) are increasingly used. The main advantage of using materials with a wider energy gap is the PCSSs ability to block significantly higher voltages and conduct higher currents than in the case of switches made of SI GaAs. Research conducted in recent years has proved experimentally that the performance of PCSSs made of SI 6H-SiC, SI 4H-SiC and SI GaN is much better compared to that made of SI GaAs [6].
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