Abstract
In order to solve the interface issues in solution deposition of multilayer OLED devices, a blended host concept was developed and applied to both spin-coating and inkjet printing of phosphorescent OLEDs. The blended host consists of 1,3-bis(carbazolyl)benzene (mCP) and1,3,5-tri(phenyl-2-benzimidazoly)-benzene (TPBi). Maximum current efficiency (CE) of 24.2 cd A−1 and external quantum efficiency (EQE) of 7.0% have been achieved for spin-coated device. Maximum CE and EQE of 23.0 cd A−1 and 6.7% have been achieved for inkjet printed device. The films deposited by printing and spin-casting were further researched to explore the effect of those different processing methods on device performance.
Highlights
Organic light-emitting diodes (OLEDs) have been drawing record attentions in the past few years, because of the industrialization of OLED mobile phones and TVs and potentials in many other applications[1,2,3,4,5,6]
A blended host solution is reported for spin-coating of emissive layer (EML) in OLED, which consists of 1,3-bis(carbazolyl)benzene blended with1,3,5-tri(phenyl-2-benzimidazoly)-benzene (TPBi) as the host and tris[2-(p-tolyl)pyridine]iridium(III) (Ir(mppy)3) as the dopant with 45:45:10 ratio
Maximum current efficiency (CE) of 24.2 cd A−1 and external quantum efficiency (EQE) of 7.0% have been achieved for spin-coated device
Summary
To prove the benefit of blended host to the device efficiency, the Device I has fabricated with spin-coating PEDOT:PSS and EML (mCP: Ir(mppy)3) with the ratio of 90:10. To investigate the difference of device performance between the spin-coated and inkjet printed OLEDs, the film properties of PEDOT:PSS and EML have been researched. It reveals that the hole mobility of printed PEDOT:PSS is higher than that of the spin-coated one, and the opposite is true for the electron mobility. The devices in this work exhibit low turn-on voltage, high luminance and high efficiency, and even the double layer printed OLED shows CE of 10.9 cd/A and luminance of 2129 cd/m2
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