Abstract
Light absorption in the region of exciton resonance of GaSe crystal is studied experimentally at high levels of optical excitation. A picosecond YAG:Nd3+ laser emitting 30-ps light pulses and a dye laser with a pulse width of ∼3 ns tunable within the range 594–643 nm were used as light sources. It was found that, at high levels of optical excitation, the exciton absorption line of the GaSe crystal disappeared, which was attributed to increasing exciton density with arising mechanisms of their decay: exciton-exciton interactions and screening of excitons by the free charge-carrier plasma. It is shown that these mechanisms are also responsible for the arising new emission band in the long-wavelength region of the photoluminescence spectrum.
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