Black silicon maskless templates for carbon nanotube forests

Abstract

We present here a proof of concept for a novel fabrication method of vertically aligned carbon nanotube forests, utilizing black silicon nanograss (a forest of silicon nanometer-sized spikes created with reactive ion etching) coated with titanium tungsten diffusion barrier as a template. The method allows maskless definition of carbon nanotube forests with control of their density, nanotube diameter and height. Four nanograss reactive ion etching recipes are investigated and their wafer-to-wafer repeatability, wafer uniformity, and density control is discussed. Evaluation of carbon nanotube forests grown on the nanograss substrates is presented with discussion of their morphology, diameter distribution, and catalyst thickness influence.