Abstract
Black Phosphorus (BP) is a 2D material with high hole mobility. However, due to its fast degradation property under ambient air, fast crystal orientation determination is required for the fabrication of BP transistor along the crystal orientation with the highest mobility. In this paper, a method for producing BP flakes with a special rectangular shape was developed. This shape provides important information about the crystal orientation of BP. By using polarized Raman measurements, it was demonstrated that the Raman peak ratios of two specific lattice vibration modes would change from 2 to 1 when the polarized laser light is parallel to armchair (AC) and zigzag (ZZ) orientations of BP. In addition, by using the rectangular BP, the mobility in the AC direction was measured to be larger than that in the ZZ direction by a factor of 2. The BP transistor with hexagonal boron nitride (h-BN) encapsulation on both top and bottom sides were also fabricated to avoid the degradation and improve the device performance.
Highlights
In 2004, the discovery of graphene had aroused a great interest in two-dimensional (2D) layered materials with particular properties as the thickness is decreased down to single layer or few layers.[1]
The extremely high mobility owing to massless Dirac feature fermions made graphene a promising candidate for field effect transistor (FET) applications.[2]
Most of the researches on black phosphorus (BP) transistors did not determine the orientation of BP thin film because of concerns that the materials would degrade under ambient conditions during the orientation determination
Summary
In 2004, the discovery of graphene had aroused a great interest in two-dimensional (2D) layered materials with particular properties as the thickness is decreased down to single layer or few layers.[1]. For BP thin film transistors (TFTs), the anisotropic property of field effect mobility has an seriously impact on the device performance.
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