Abstract
A new doping method of BP by integration of density-controlled monolayer MoS2 nanoparticles (NPs) is demonstrated. MoS2 NPs with different density were synthesized by chemical vapor deposition (CVD) and transferred onto a few-layer BP channel, which induced a p-doping effect. The hole concentration of BP was controlled with different densities of MoS2 NPs in a range of 1012 - 1013 cm-2. The doping mechanism was explained by a charge transfer by work function differences between BP and MoS2 NPs, which was confirmed by Kelvin probe force microscopy (KPFM) and electrical measurements. Raman and X-ray photoelectron spectroscopy (XPS) were measured to confirm the oxidation on the edge of MoS2 NPs and a doping effect of MoS2 NPs on a BP channel. This result shows promising possibility for BP device functionalization by decorating various NPs, which will enhance the device performance such as photoresponsivity, or chemical sensitivity.
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