Abstract
We demonstrate a novel black phosphorus carbide (b-PC) phototransistor with a wide absorption spectrum that spans most molecular fingerprints till 8,000 nm and a tunable responsivity and response time at an excitation wavelength of 2,004 nm. The b-PC phototransistor achieves a high responsivity (R) of 2,163 A/W and a short response time of 5.6 ps, which renders it suitable for high speed and weak signal sensing. Its noise-equivalent-power NEP shot ∼ 1.3 fW/Hz1/2 indicates infrared radiation in the femto-watt range can be detected above the shot noise level of this phototransistor. Under the same excitation power, its responsivity and detectivity performance in ambient and room temperature conditions are currently ahead of all recent top performing photodetectors based on 2D materials, showing promise for future internet-of-things (IoT) applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.