Abstract
In this letter, we discuss the design, fabrication, and high-frequency characterization of black phosphorous (BP)based field-effect transistors (FETs) and their circuit applications. We demonstrate BP radio frequency (RF) FETs with an extrinsic transit frequency ~3 GHz and an extrinsic maximum oscillation frequency ~7 GHz. We also demonstrate various BP FET-based RF circuits working in the megahertz range for the first time. We show the design and simulation of BP-based RF amplifier using experimentally obtained scattering parameters, operating at gigahertz frequency with substantial gain. The experimental and simulation results reveal the major performance bottlenecks of these circuits and place BP FET as a promising device candidate for future thin-film nanoelectronic RF systems.
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