Abstract
Upto now, the recording of backscatter Kikuchi diffraction (BKD) patterns (also called electron backscattering patterns, EBSP) for microscale texture analysis is mostly performed at high primary beam voltages U > 20 kV using an SEM with a tungsten or LaB6 electron gun. Under these circumstances, a lateral resolution of 0.2-0.5 μm has been reported. However, the texture analysis of fine-grained bulk materials or vacuum-deposited thin metallic layers as used in the IC-industry requires a higher spatial resolution. A fieldemission electron gun (FEG) with a much higher electron-optical brightness can deliver the 1-nA beam current needed for EBSP recording in a spot of about 10 nm, enabling a lateral resolution of 20×80 nm3 and an information depth of 10 nm at 20 kV. In Ref. 2, the possibility of using lower beam voltages to obtain an even higher resolution is mentioned. Monte Carlo simulations indeed show that the interaction volume decreases at least linearly with decreasing U.
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