Abstract
The conditions of the existence of a bistable state in a ferromagnetic layer included in the magnetoresistive memory switched by the electric field have been investigated. Such states, which correspond to the local minima of the Gibbs potential, correspond to mutually perpendicular magnetization directions. Evaluations of a minimal volume of the ferromagnetic layer, at which the barrier between the states exceeds the superparamagnetic limit, are obtained for a series of promising materials, and possibilities of its decrease are considered.
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