Abstract
The Suzuki coupling reaction was used to synthesize the poly (9,9-dioctylfluorene-2,7-diyl) (PFO), MWCNTs were doped in PFO by physical blending. Memristors were prepared with PFO and PFO:MWCNTs as active layer, and the effect of MWCNTs content on the electrical characteristics of the device was proved. The results reveal that the devices with doped and undoped MWCNTs had bistable nonvolatile memory behavior. After doping MWCNTs, the ON/OFF state current ratio is obviously improved and the device with 1.6% MWCNTs content shows the maximum ON/OFF curent ratio of 2.6 × 103 and lower threshold voltage approximately −0.7 V. Futhermore, the device remains stable for 3 h and the curent has no obvious change after 9000 read cycles, whether it is ON state or OFF state.
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