Bistable defects in low‐energy electron irradiated n‐type 4H‐SiC

Abstract

AbstractEpitaxial n‐type 4H‐SiC layers were irradiated at room temperature by low‐energy electrons. During the annihilation process of the irradiation induced defects EH1 and EH3, three new bistable centers, labeled EB centers, were detected in the DLTS spectrum. The reconfigurations of the EB centers (I → II and II → I) take place at room temperature with a thermal reconfiguration energy of about 0.95 eV. The threshold energy for moving the Si atom from its site in the SiC crystal structure is higher than the applied irradiation energy; therefore, the EB centers are attributed to carbon related complex defects. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)