Abstract
Standard and oxygenated high resistivity silicon diodes were irradiated with neutrons to fluences up to 2×10 14 cm −2 1MeV neutron NIEL equivalent. After beneficial annealing at room temperature diodes were kept at 20°C. C– V measurements were performed regularly to determine the full depletion voltage. Bistable damage was activated with bias application to the diodes. Its creation rate was measured during different stages of reverse annealing. For a comparison, a change of full depletion voltage was determined also from TCT measurements.
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