Abstract
AbstractWe have investigated effects of the resonant wave‐function coupling between Wannier‐Stark localization states on photocurrent properties in a GaAs (6.8 nm)/Al0.1Ga0.9As (4.0 nm) superlattice. The resonant coupling, which causes an anticrossing behavior of the relevant transition energies, were clearly detected by electroreflectance spectroscopy and analyzed by calculating the Wannier‐Stark localization states as a function of electric field strength. It is found that the photocurrent‐voltage characteristics exhibit a peak structure, which results in a negative differential resistance, owing to a change of the optical transition probability under the resonant‐coupling condition between the first and second quantized electron states in adjacent quantum wells. Utilizing this negative differential resistance property, we have demonstrated a photocurrent‐bistability operation of a self‐electro‐optic effect device. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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