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Abstract
We have experimentally demonstrated the extrinsic and intrinsic bistability in resonant tunnel diode (RTD) structures with InAs dots. We have clarified the operating mechanism of the extrinsic bistability in double barrier resonant tunnel diodes (DBRTDs) with InAs dots and pointed out that the relatively long hot electron charging time (more than 20 ms) must be overcome in order to apply this phenomenon to high speed switching two-terminal devices. We have also demonstrated the intrinsic bistability in electron tunneling through a single dot for the first time and examined its physical mechanism.
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