Bismuth thickness-dependent structural and electronic properties of Bi/As2Se3 bilayer thin films

Abstract

The structural, microstructural and electronic band gap properties of bilayer Bi/As2Se3 thin films prepared on glass substrate have been discussed in detail. The thin films prepared by thermal evaporation technique under high vacuum were characterized by X-ray diffraction (XRD), Raman spectroscopy, field-emission scanning electron microscopy (FESEM) and UV–visible–NIR spectrophotometer. The bilayer films with small Bi thickness showed amorphous nature, while large Bi thickness film led to the development of sharp XRD peaks corresponding to Bi and Bi2Se3 phase. The band gap of the studied film decreased with increasing Bi layer thickness which is explained on the basis of high concentration of localized defect states in the band gap region. The FESEM images showed the smooth and homogeneous surface for all the films. The Raman spectra showed the different structural units like AsSe3 pyramidal unit and Se8 rings that change with the Bi layer thickness. The present study reveals the interface diffusion of Bi into As2Se3 layer and interaction of Bi with Se due to exposure of the films to UV radiation.