Abstract
Using scanning tunneling microscopy (STM) observations, it has been found that codeposition of Bi and In onto Si(111)7×7 surface, followed by 250–550°C annealing, induces formation of a set of the ordered (Bi, In)/Si(111) stable structures, including 2√3×3, 5×5, √7×√7 and 2×2. Under appropriate conditions, the structures can occupy almost the entire surface, except for 2√3×3 which is formed only locally. Scanning tunneling spectroscopy has demonstrated that the 5×5 and √7×√7 structures are semiconducting, while the 2×2 is metallic. The 5×5, √7×√7, and 2×2 structural models have been proposed on the basis of DFT calculations and comparison of simulated and experimental STM images.
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