Abstract
AbstractThe dilute bismide semiconductor GaAs1–xBix is an interesting new semiconductor alloy with novel properties and potential device applications. Like the dilute nitride alloy GaAs1–xNx, the dilute bismide shows a giant bandgap bowing effect. Bi alloying primarily affects the states in the vicinity of the top of the valence band rather than the bottom of the conduction band as in the case of N alloying. MBE growth of dilute bismides requires low growth temperatures (320‐390 °C) and near stochiometric group III/V ratios, due to the strong tendency of Bi to surface segregate under usual GaAs growth conditions. Optimal growth conditions are close to conditions that produce Bi and/or Ga droplets. In‐situ light scattering is found to be a useful tool for defining growth conditions that do not produce droplets on the surface. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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