Abstract
First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation.
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