Abstract
First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
