Abstract
GaAsBiN is a potentially interesting alloy which may be exploited in near- and mid-infrared photonic devices. Here we present the predicted band parameters such as band gap (Eg), the spin-orbit splitting energy (ΔSO), band offsets and strain of GaAsBiN on GaAs versus N and Bi compositions based on recent experimental data. We also show how bismuth may be used to form alloys whereby ΔSO > Eg thereby providing a means of suppressing non-radiative CHSH (hot-hole producing) Auger recombination and inter-valence band absorption. We determine the optimum conditions where ΔSO > Eg, which is expected to improve the high-temperature performance and thermal stability of light emitting devices. It is also shown that preferential band offsets are achievable with GaAsBiN, which makes this material system promising for photonic devices operating in the near- and mid-infrared.
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