Abstract
Silicon wire waveguide technology becomes great issue in optical communication system. The high index contrast of the silicon wire waveguide induced the birefringence. It played important role in silicon wire waveguide loss since it caused polarization dependent loss (PDL), polarization mode dispersion (PMD) and wavelength shifting. Hence, suitable controlling birefringence in silicon wire waveguide becomes very important. The current birefringence controlling techniques by using cladding stress and geometrical variation in bulk silicon waveguide was presented. Unfortunately, it could not obtain zero birefringence when applied to silicon wire waveguide. The over-etching technique was employed in this paper to obtain zero birefringence. The tall silicon wire waveguide obtained minimum birefringence.
Highlights
Silicon wire waveguide structure was fabricated by depositing the silica layer onto the silicon using plasma-enhanced chemical vapor deposition (PECVD)
The presence of birefringence is an important issue in silicon wire waveguide because it can induce polarization mode dispersion (PMD), polarization dependent loss (PDL) and wavelength shifting [2,3,4]
The thermal stress effect to the waveguide was neglected since the dominant birefringence is geometrical birefringence
Summary
Silicon wire waveguide structure was fabricated by depositing the silica layer onto the silicon using plasma-enhanced chemical vapor deposition (PECVD). The effect of over-etching to control birefringence in silicon wire waveguide has been studied theoretically and numerically. The core width and The over-etched depth would be varied This step as means to know the effect of the core thickness and overetched depth to the guided mode in the core region. The core thickness and the over-etched depth would be varied This step as means to know the effect of core thickness and overetched depth to the guided mode in the core region. Step 4: The final step is validation by comparing the result in step 3 to the published data This step is used to know the validity of the over-etched silicon wire waveguide numerical approach
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