Abstract
We investigated the electric-field-induced resistance-switching behavior of metal-insulator-metal (MIM) cells based on TiO2 thin films fabricated by the reactive RF-sputtering technique. MIM cells were constructed by sandwiched TiO2 thin films between a pair of electrodes; Ti thin films were employed to form an ohmic bottom contact and NiCr thin films were employed to form Schottky top electrodes obtaining Ti/TiO2/NiCr MIM cells. Schottky barrier height for the TiO2/NiCr junction was determined according to the thermionic emission model by using the Cheung´s functions. SEM and Raman analysis of the TiO2 thin films were carried out to ensure the quality of the films. Current-Voltage (I-V) sweeps obtained at room temperature by the application of dc bias showed a bipolar resistive switching behavior on the cells. Both low resistance state (ON state) and high resistance state (OFF state), of Ti/TiO2/NiCr cells are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 103 and the retention properties of both states are very stable after 105 s with a voltage test of 0.1 V.
Highlights
The Electric-field-induced switching of the resistance is very promising for potential applications in future highperformance non-volatile memory, known as resistance random access memory (RRAM) [1,2]
In an attempt to optimize the resistive switching present in the systems based on TiO2, in this work we study the behavior of resistive switching MIM cells constructed by using an ohmicSchottky electrode pair
From our experiments we show that lower transition voltages can be obtained by using this electrode pair compared to those reported for TiO2-based MIM cells prepared with other electrodes combination showing a bipolar resistive switching [19,21,22]
Summary
The Electric-field-induced switching of the resistance is very promising for potential applications in future highperformance non-volatile memory, known as resistance random access memory (RRAM) [1,2]. Many experimental reports have been focused on the preparation of the TiO2 layer by several growth techniques, such as sputtering [13], sol-gel [18], ALD [19], etc; and study the retention time, temperature stability and endurance of MIM structures or, on the other hand, to determine the model driving the resistive switching mechanism [20,21]. In an attempt to optimize the resistive switching present in the systems based on TiO2, in this work we study the behavior of resistive switching MIM cells constructed by using an ohmicSchottky electrode pair. From our experiments we show that lower transition voltages can be obtained by using this electrode pair compared to those reported for TiO2-based MIM cells prepared with other electrodes combination showing a bipolar resistive switching [19,21,22]. © Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales oxide used in the construction of the heterostructures is the expected, structural characterization was performed with a microprobe Raman Jovin-Ivon equipped with a microscope Olympus BX40 and a He-Ne laser at 632 nm as the excitation source
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