Abstract
Reproducible bipolar resistive switching behavior observed in Metal-Insulator-Semiconductor (Al/HfO2/In0.53Ga0.47As) structures is reported. The resistive switching originates from the redox phenomenon at the Al gate electrode which is induced by the migration of the oxygen ions. Low-frequency noise measurement is used to study the current fluctuation mechanisms. Scanning tunneling microscopy results confirm the formation of conducting filaments during the SET process in the devices.
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