Abstract
This work reports the memristive properties of solution-processable cobalt oxide nanoparticles (CoO NPs) for resistive memory application. The memristive current???voltage hysteresis loop with good bipolar-resistive switching (BRS) property was shown by the developed device. Substantiate to this, the asymmetric device charge and double-valued charge???magnetic flux characteristics were calculated from the experimental electrical data and demonstrated the existence of the non-ideal memristor properties. The CoO memristive device can switch up to 103 BRS cycles and can retain the data up to 5????????103 s. The switching uniformity of the CoO memory device was elucidated by a cumulative probability distribution and statistical calculations. The low-resistance state shows little variation whereas broad variation was observed for high-resistance state. The theoretical model fitting results suggested that the conduction in the device during high-resistance sate was due to the Schottky and space charge-limited current and Ohmic current dominated in the low-resistance state. The formation and rupture of conductive filament with the assistance of interfacial dynamic is a possible reason for BRS in the CoO NPs-based memristive device.
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