Abstract
The compact model for NMOS transistors combines both the high-current bipolar mode and the MOS mode, considering the modulation of the current gain /spl beta/ and the gate coupling effects. For the studied 0.35 /spl mu/m-CMOS device, measurement and simulation correlate very well with respect to layout variations, fulfilling a prerequisite for the simulation guided synthesis and optimization of protection structures and schemes. The open model interface also allows the use of existing proprietary MOS-models.
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