Abstract
The compact model for NMOS transistors combines both the high-current bipolar mode and the MOS mode, considering the modulation of the current gain /spl beta/ and the gate coupling effects. For the studied 0.35 /spl mu/m-CMOS device, measurement and simulation correlate very well with respect to layout variations, fulfilling a prerequisite for the simulation guided synthesis and optimization of protection structures and schemes. The open model interface also allows the use of existing proprietary MOS-models.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
