Abstract
Junction type static induction transistor is designed as normally-off device, called as bipolar mode static induction transistor (BSIT), where the channel is completely pinched off by the gate to channel built-in voltage, resulting in an appearance of potential barrier in the channel. Basic properties of BSIT are discussed theoretically and experimentally. Possibilities of high current and high speed switching performance of BSIT has been demonstrated experimentally by using the sample having a cell size of 800 × 520 µm2mounted in a high frequency package.
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