Abstract
Abstract This comprehensive review of bipolar magnetotransistor (BMT) sensors is an attempt to consider from a general point of view the fundamental physical principles that determine magnetotransistor (MT) action, depending on the specific design and operating conditions. Some recently established properties of these sensors have likewise been included, e.g., the filament magnetosensitivity effect, electric control of the sign of the magnetosensitivity, etc. The principal connection of BMT sensors with Hall-effect devices has been established. The most important functional sensors, such as integrated vector transducers and multisensors, have been discussed. A comparison has been made of the magnetotransistor figures of merit.
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