Abstract
A hybrid-mode operation of silicon-on-insulator (SOI) bipolar mode field effect transistor (BMFET) is proposed to improve the current gain. The device characteristics are analyzed and verified numerically for hybrid mode, BMFET mode, and double-diffused metal-oxide-semiconductor field effect transistor (DMOS) mode by MEDICI simulation. In hybrid-mode operation, DMOS, lateral bipolar transistor, and BMFET currents flow simultaneously. The proposed SOI BMFET exhibits 30 times larger current gain in hybrid mode operation by connecting DMOS gate to the p+ gate of BMFET structure as compared with the conventional structure without sacrifice of breakdown voltage and leakage current characteristics. The improved current gain characteristics are achieved by the DMOS-gate-induced hybrid effect that lowers the barrier of p-body and reduces the charge in the p-body.
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