Abstract
The device quality amorphous alumina films (Al2O3) deposited in an industrial batch tool on different metal and semiconductor substrates were investigated and simulated. To describe the charge injection at an interface, the modified Lundstrom-Svensson approach was used. Metal-insulator-semiconductor structures having metal electrodes with large work function differences were characterized to reveal bulk conductivity mechanisms. Experimental results showed that the conductivity in a-Al2O3 films is limited by both bulk and interface conditions. Electrons and holes are involved in the charge transport. The charge transport in Al2O3 is satisfactorily described by the multiphonon mechanism of electron and hole trap ionization with thermal WT = 1.5 eV and optical WOPT = 3.0 eV trap ionization energies, respectively.
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