Biplanar Epitaxial AlN/SiC/(n, p)SiC Structures for High-Temperature Functional Electronic Devices

Abstract

We investigate the possibility of integration of epitaxial SiC and AlN technologies using opposite faces of the common SiC substrate (AlN epitaxy is performed at the final stage), preserving the initial quality of the preliminarily prepared SiC layers. In particular, we study the influence of AlN heteroepitaxy and accompanying elastic stresses on the redistribution of a doping impurity in SiC layers, as well as the transformation of the local values of the breakdown voltage of barrier diodes, which is associated with this process. As the diagnostic procedure in studying possible negative consequences of durable growth (about 3 h, 60 μm), we have measured reverse branches of the current–voltage characteristics of surface-barrier diode matrices of the Au–SiC type, which have intentionally been formed before and immediately after AlN epitaxy and then removed after the appropriate measuring procedure. Statistical processing of the breakdown voltages (including the calculation of histograms) shows that the variation of mean values and dispersion for the n- as well as p-layers is insignificant.