Abstract

In order to realize artificial intelligence using an electronic device, it is obligatory to develop a functional solid-state device that mimics synaptic plasticity, analog memory, and forgetting effect exhibited by the biological neurons. In this context, the memristor is an ideal candidate owing to its nonlinearity, passivity, and in-memory computing capabilities. The present work demonstrates the development of a bio-mimicking tungsten trioxide (WO3) memristor device using simple and costs effective spray pyrolysis method. The performance of the developed device was optimized using silver (Ag) doping. Here we show that the analog memory, nature of pinched hysteresis loop, synaptic weights, resistive switching voltages, and forgetting characteristics of spray deposited WO3 memristor can be systematically tuned by appropriate Ag doping. The effect of Ag doping on the structural, morphological, and electrical characteristics of WO3 memristor devices was also investigated. The conduction mechanism of the developed devices follows the Ohmic and space charge limited current theories. The results presented in this work are helpful for development and optimization of WO3 memristor device for the neuromorphic applications.

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