Biomaterial Gelatin Film Based Crossbar Structure Resistive Switching Devices

Abstract

Crossbar structural resistive switching devices (memristors) are fabricated using biomaterial gelatin film as the dielectric layer. The performance of the devices and the effects of gelatin film thickness and baking temperature are investigated. Results show that the optimal gelatin film thickness for the memristors is ∼80 nm and baking temperature is ∼105 °C. The optimized memristors show a bipolar resistive switching behavior with the resistance ratio between the high-resistance state and low-resistance state over 102, the retention time over 106 s without any obvious deterioration, and excellent stability and reliability, demonstrating its good potential for applications. A conductive atomic force microscopy is used to study the conductivity of the gelatin films under various biases, and the results indicate that the conductive filaments are responsible for the resistive switching behavior of the gelatin-based memristors.